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Silicon single crystal seed crystal

Silicon single crystal seed crystal, Total:80 items.

In the international standard classification, Silicon single crystal seed crystal involves: Semiconducting materials, Paper and board, Vocabularies, Testing of metals, Optical equipment, Industrial furnaces, Solar energy engineering, Galvanic cells and batteries, Nuclear energy engineering, Machine tools, Fibre optic communications, Semiconductor devices, Products of the chemical industry, Integrated circuits. Microelectronics, Non-ferrous metals, Energy and heat transfer engineering in general, GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION.

Hebei Provincial Standard of the People's Republic of China, Silicon single crystal seed crystal

• DB13/T 5092-2019 General Technical Requirements for Square Seed Crystals for Solar-Grade Monocrystalline Silicon Ingots
• DB13/T 1314-2010 Solar grade monocrystalline silicon square rod, monocrystalline silicon wafer
• DB13/T 1828-2013 Solar grade monocrystalline silicon wafer

UNKNOWN, Silicon single crystal seed crystal

• YB 1602-83 Silicon single crystal
• YB 1602-1983 Silicon single crystal
• YB 1603-83 Silicon single crystal cutting discs and grinding discs
• YB 1601-83 Silicon polycrystalline
• YB 1601-1983 Silicon polycrystalline

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Silicon single crystal seed crystal

• GB/T 12962-2005 Monoccrystslline silicon
• GB/T 12962-1996 Monocrystalline silicon
• GB/T 12962-2015 Silicon single crystal
• GB/T 29504-2013 300 mm monocrystalline silicon
• GB/T 4059-2007 Polycrystalline silicon.Examination method.Zone-melting on Phosphorus under controlled atmosphere
• GB/T 12964-2003 Monocrystalline silicon polished wafers
• GB/T 29506-2013 300 mm polished monocrystalline silicon wafers
• GB/T 25076-2010 Monocrystalline silicon of solar cell
• GB/T 30656-2023 Silicon carbide single crystal polished wafer
• GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
• GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom
• GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices
• GB/T 12632-1990 General specification of single silicon solar cells
• GB/T 26065-2010 Specification for polished test silicon wafers
• GB/T 12965-2005 Monocrystalline silicon cut slices and lapped slice
• GB/T 12963-1996 Polycrystalline silicon
• GB/T 5238-2009 Monocrystalline germanium and monocrystalline germanium slices
• GB/T 5238-2009e Monocrystalline germanium and monocrystalline germanium slices
• GB/T 29508-2013 300 mm monocrystalline silicon as cut slices and grinded slices
• GB/T 12963-2009 Specification for polycrystalline silicon
• GB/T 5238-2009(英文版) Monocrystalline germanium and monocrystalline germanium slices
• GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells
• GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
• GB/T 31092-2014 Monocrystalline sapphire ingot
• GB/T 31092-2022 Monocrystalline sapphire bar

Group Standards of the People's Republic of China, Silicon single crystal seed crystal

• T/ZSA 72-2019 Monocrystalline Silicon Carbide
• T/IAWBS 001-2021 Silicon carbide single crystal
• T/ZZB 1389-2019 Monocrystalline silicon photovoltaic cells
• T/CEEIA 769-2023 Fully automatic silicon single crystal furnaces
• T/SCSJXH 001-2024 Monocrystalline silicon PERC solar cells
• T/ZZB 2675-2022 Monocrystalline silicon as lapped wafers for TVS
• T/ZZB 1927-2020 Automatic mono-silicon cutting machine
• T/JSAS 015-2021 Monocrystalline silicon solar cells
• T/HEBQIA 073-2022 Superconducting magnets for Czochralski monocrystalline silicon
• T/SZBX 118-2023 Monocrystalline silicon wafers for solar cells
• T/CASME 465-2023 IPA-free Texturizer for Mono-silicon
• T/CEC 290-2019 Technical Requirements for Back Contact Single Crystal Wafer
• T/IAWBS 005-2018 6 inch polished monocrystalline silicon carbide wafers
• T/NXCL 30-2024 300 mm low oxygen content single crystaline Czochralski silicon
• T/CEMIA 004-2018 Quartz crucibles for single crystal silicon growth in photovoltaic industry

國家市場監(jiān)督管理總局、中國國家標準化管理委員會, Silicon single crystal seed crystal

• GB/T 12964-2018 Monocrystalline silicon polished wafers
• GB/T 26069-2022 Annealed monocrystalline silicon wafers
• GB/T 37418-2019 Lutetium oxyorthosilicate, lutetium-yttrium oxyorthosilicate scintillation single crystals
• GB/T 25076-2018 Monocrystalline silicon for solar cell
• GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers
• GB/T 26071-2018 Monocrystalline silicon wafers for solar cells
• GB/T 5238-2019 Monocrystalline germanium and monocrystalline germanium slices
• GB/T 41325-2022 Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit

未注明發(fā)布機構, Silicon single crystal seed crystal

• SEMI M55-0308-2008 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS

Professional Standard - Non-ferrous Metal, Silicon single crystal seed crystal

• YS/T 1167-2016 Monocrystalline silicon etched wafers

Professional Standard - Electron, Silicon single crystal seed crystal

• SJ/T 11501-2015 Test method for determining crystal type of monocrystalline silicon carbide
• SJ/T 11500-2015 Test method for measuring crystallographic orientation of monocrystalline silicon carbide
• SJ/T 10173-1991 TDA75 single crystalline silicon solar cell
• SJ/T 11854-2022 Czochralski monocrystalline silicon furnace for photovoltaic
• SJ/T 11502-2015 Specification for polished monocrystalline silicon carbide wafers
• SJ/T 11853-2022 Positive pressure suspended zone melting single crystal silicon furnace
• SJ 2572-1985 Silicon monocrystalline rods and sheets for solar cells
• SJ/T 11864-2022 Semi-insulating silicon carbide single crystal substrate

Korean Agency for Technology and Standards (KATS), Silicon single crystal seed crystal

• KS D 2715-2006 Tensile specimen of single- and poly-crystal nano/micro thin film materials

Professional Standard - Ferrous Metallurgy, Silicon single crystal seed crystal

• YB 1603-1983 Silicon single crystal cutting and grinding discs

Professional Standard - Building Materials, Silicon single crystal seed crystal

• JC/T 1048-2007 Fused quartz crucibles for single crystal silicon growth
• JC/T 1048-2018 Quartz crucible for single crystal silicon growth
• JC/T 2796-2023 High purity graphite powder for silicon carbide single crystal

German Institute for Standardization, Silicon single crystal seed crystal

• DIN V VDE V 0126-18-3:2007 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)

National Metrological Verification Regulations of the People's Republic of China, Silicon single crystal seed crystal

• JJG 48-2004 Standard Slice of Single Crystal Silicon Resistivity

Shanghai Provincial Standard of the People's Republic of China, Silicon single crystal seed crystal

• DB31/ 792-2014 Norm of energy consumption per unit products for monocrystalline silicon and silicon wafers
• DB31/T 792-2014 Energy consumption quota per unit product of silicon single crystal and its silicon wafer
• DB31/ 792-2020 Energy consumption quota per unit product of silicon single crystal and its silicon wafer

RO-ASRO, Silicon single crystal seed crystal

• STAS 9675-1974 CRYSTALLINE SILICON

CZ-CSN, Silicon single crystal seed crystal

• CSN 34 5911-1986 Polycrystalline silicion

Association Francaise de Normalisation, Silicon single crystal seed crystal

• NF C57-203*NF EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing.

工業(yè)和信息化部, Silicon single crystal seed crystal

• YS/T 724-2016 Silicon powder for polycrystalline silicon

Others:   Energy consumption quota per unit product of silicon single crystal, Energy consumption quota per unit product of silicon single crystal and its silicon wafer, Test method for electrical parameters of silicon carbide single crystal material, Silicon carbide single crystal, Conversion procedure for boron-doped phosphorus-doped arsenic-doped silicon single crystal resistivity and dopant concentration, Silicon carbide single crystal material, Conversion procedure of boron-doped phosphorus-doped silicon single crystal resistivity and dopant concentration, Silicon Single Wafer Orienter, Silicon single crystal and its silicon wafer unit products, Silicon single crystal orientation, Silicon single crystal, Carbon and oxygen content in silicon single crystal, Silicon single crystal carbon and oxygen content, Silicon single crystal polished wafer, Silicon single crystal cutting and grinding discs, Silicon single crystal for solar cells.